2SC6077 Datasheet | Toshiba

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) ○ Power Amplifier Applications ○ Power Switching Applications - - Low collector saturation voltage: VCE (sat) = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 μs (typ) Unit: mm .. Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol VCBO VCEX VCEO VEBO DC Pulse IC ICP IB PC Tj Tstg Rating 160 160 80 9 3.0 5.0 1.0 1.8 150 - 55～150 Unit V V V V A A A W °C °C 1 : BASE 2 : COLLECTOR（HEAT SINK） 3 : EMITTER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range JEDEC JEITA TOSHIBA Weight:1.5g(typ) － － 2-10T1A Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO h FE (1) DC current gain h FE (2) h FE (3) Collector emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Rise time VCE (sat) (1) VCE (sat) (2) VBE (sat) f T Cob tr IB1 Test Conditions VCB = 160 V, IE = 0 VEB = 9 V, IC = 0 IC = 10 m A, IB = 0 VCE = 2 V, IC = 1 m A VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1 A IC = 0.5 A, IB = 50 m A IC = 1 A, IB = 100 m A IC = 1 A, IB = 100 m A VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0,f = 1MHZ 20 μs IB1 IB2 Output 24 Ω Min － － 80 150 180 100 － － － － － － Typ. － － － － － － － － － 150 14 0.05 Max 1.0 1.0 － － 450 － 0.3 0.5 1.5 － － － V V V MHZ p F Unit u A u A V Input IB2 Switching time Storage time tstg － － us VCC = 24 V Fall time tf IB1 = - IB2 = 100 m A Duty cycle ≦1% － 0.15 － 2006-10-20 Marking C6077 Part No. Lot code A line indicates lead (Pb)-free package or lead (Pb)-free finish. .. 2006-10-20 - VCE 3 300 100 50 30 2 10 3 - VBE mon emitter VCE = 2 V Single nonrepetitive pulse (A) (A) 2 Ta = 100℃ 5 Collector current Collector...