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2SC6000
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6000
High Speed Switching Applications DC-DC Converter Applications
• • • High DC current gain: hFE = 250 to 400 (IC = 2.5 A) Low collector-emitter saturation: VCE (sat) = 0.18 V (max) High speed switching: tf = 13 ns (typ) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Tc = 25°C DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PC Tj Tstg Rating 120 120 50 6 7.0 10.0 0.5 20 150 −55 to 150 Unit V V V V A A W °C °C
JEDEC JEITA TOSHIBA
― ― 2-7J1A
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g.
2SC6000 Datasheet
