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2SC6040
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6040
High-Speed and High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications
• • High-speed switching: tf = 0.2 µs (max) (IC = 0.3 A) High breakdown voltage: VCES = 800 V, VCEO = 410 V Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C DC Pulse Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Rating 800 800 410 8 1.0 2.0 0.5 1.0 150 −55 to 150 Unit V V V V A A W °C °C 1. Base 2. Collector 3. Emitter
JEDEC JEITA TOSHIBA Weight:
― ― 2-7D101A 0.2 g (typ.
2SC6040 Datasheet
