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Transistors
2SC6045
Silicon NPN epitaxial planar type
For UHF band low noise amplification
Unit: mm
Features
0.33+–00..0025
0.10+–00..0025
Low noise figure NF
3
High forward transfer gain |S21e|2
0.15 min.
0.80±0.05 1.20±0.05
High transition frequency fT
5°
0.15 min.
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
0.23+–00..0025
12
(0.40) (0.40) 0.80±0.05 1.20±0.05
/ Collector-base voltage (Emitter open)
VCBO
15
V
5°
Collector-emitter voltage (Base open)
e e) Emitter-base voltage (Collector open) c e. d typ Collector current n d stag tinue Collector power dissipation a e cle con Junction temperature n u t lifecyed, dis Storage temperature
VCEO
10
V
VEBO
2
V
IC
80
mA
PC
100
mW
Tj
125
°C
Tstg −55 to +125 °C
0 to 0.01 0.52±0.
2SC6045 Datasheet
