Datasheet Details
| Part number | 2SC6093 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.35 KB |
| Description | NPN Transistor |
| Datasheet | 2SC6093-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC6093.
| Part number | 2SC6093 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.35 KB |
| Description | NPN Transistor |
| Datasheet | 2SC6093-INCHANGE.pdf |
|
|
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·Low saturation voltage ·Built-in damper diode type ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage color display horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A IB Base Current- Continuous 2 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 2 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC6093 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.35A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC6093LS | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
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