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2SC6097 - NPN Epitaxial Planar Silicon Transistor

Datasheet Summary

Features

  • Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature.

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Datasheet Details

Part number 2SC6097
Manufacturer Sanyo Semicon Device
File Size 68.00 KB
Description NPN Epitaxial Planar Silicon Transistor
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www.DataSheet4U.com Ordering number : ENA0412 2SC6097 2SC6097 Applications • NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features • • • • • Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Conditions Ratings 100 100 60 6.
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