2SC6097
Key Features
- Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation.
- Part: 2SC6097
- Description: NPN Epitaxial Planar Silicon Transistor
- Category: Transistor
- Manufacturer: SANYO
- Size: 68.00 KB
Datasheets by Manufacturer
- 2SC6097 — Inchange Semiconductor — Silicon NPN Power Transistor
- 2SC6091 — SANYO — NPN Triple Diffused Planar Silicon Transistor
- 2SC6092LS — SANYO — NPN Triple Diffused Planar Silicon Transistor
- 2SC6096 — onsemi — Bipolar Transistor
- 2SC6099 — Inchange Semiconductor — Silicon NPN Power Transistor
- 2SC6090LS — SANYO — NPN Triple Diffused Planar Silicon Transistor
- 2SC6095 — onsemi — Bipolar Transistor
- 2SC6098 — onsemi — Bipolar Transistor
- 2SC6098 — Inchange Semiconductor — Silicon NPN Power Transistor
- 2SC6099 — onsemi — Bipolar Transistor