2SC6096 - Bipolar Transistor

Product Overview

ON Semiconductor

Part number	2SC6096
Manufacturer	ON Semiconductor
File Size	207.15 KB
Description	Bipolar Transistor
Datasheet	2SC6096 Datasheet
Additional preview pages of the 2SC6096 datasheet.

Adoption of FBET, MBIT process.
Low collector-to-emitter saturation voltage.
High allowable power dissipation.
Large current capacity.
High-speed switching.
Halogen free compliance Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCES VCEO VEBO IC ICP Package Dimensions unit : mm (typ) 7007.

📁 Similar Datasheet

2SC6096 - NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
2SC6090 - Silicon NPN Transistor (Inchange Semiconductor)
2SC6090LS - NPN Triple Diffused Planar Silicon Transistor (Sanyo)
2SC6091 - NPN Triple Diffused Planar Silicon Transistor (Sanyo)
2SC6092LS - NPN Triple Diffused Planar Silicon Transistor (Sanyo)
2SC6093 - NPN Transistor (INCHANGE)
2SC6093LS - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
2SC6094 - NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)

Other Datasheets by ON Semiconductor

Published: Apr 1, 2016 |