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2SC6095 - Bipolar Transistor

Datasheet Summary

Features

  • Adoption of FBET, MBIT process.
  • Low collector-to-emitter saturation voltage.
  • High allowable power dissipation.
  • Large current capacity.
  • High-speed switching Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCES VCEO VEBO IC ICP Package Dimensions unit : mm (typ) 7007B-004 Top View 4.5 1.6 2SC6095-T.

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Datasheet Details

Part number 2SC6095
Manufacturer ON Semiconductor
File Size 212.02 KB
Description Bipolar Transistor
Datasheet download datasheet 2SC6095 Datasheet
Additional preview pages of the 2SC6095 datasheet.

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Full PDF Text Transcription

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Ordering number : ENA0411A 2SC6095 Bipolar Transistor 80V, 2.5A, Low VCE(sat), NPN Single PCP http://onsemi.com Applicaitons • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features • Adoption of FBET, MBIT process • Low collector-to-emitter saturation voltage • High allowable power dissipation • Large current capacity • High-speed switching Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCES VCEO VEBO IC ICP Package Dimensions unit : mm (typ) 7007B-004 Top View 4.5 1.6 2SC6095-TD-E 1.5 Conditions Ratings Unit 120 V 120 V 80 V 6.5 V 2.5 A 4A Continued on next page.
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