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2SC6099 - Bipolar Transistor

Datasheet Summary

Features

  • Adoption of FBET, MBIT process.
  • Large current capacity.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching.
  • High allowable power dissipation Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Symbol VCBO VCES VCEO VEBO IC ICP IB Conditions Ratings Unit.

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Datasheet Details

Part number 2SC6099
Manufacturer ON Semiconductor
File Size 303.85 KB
Description Bipolar Transistor
Datasheet download datasheet 2SC6099 Datasheet
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Full PDF Text Transcription

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Ordering number : ENA0435A 2SC6099 Bipolar Transistor 100V, 2A, Low VCE(sat), NPN Single TP/TP-FA http://onsemi.com Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features • Adoption of FBET, MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Symbol VCBO VCES VCEO VEBO IC ICP IB Conditions Ratings Unit 120 V 120 V 100 V 6.5 V 2A 3A 400 mA Continued on next page.
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