2SC6019
Features
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Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow h FE range. High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C
. Conditions
Ratings 15 15 6 7 10 600 0.8 15 150 --55 to +150
Unit V V V A A m A W W °C °C
Data Shee
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO h FE f T Conditions VCB=12V, IE=0A VEB=4V, IC=0A VCE=2V, IC=500m A VCE=2V, IC=500m A Ratings min typ max 0.1 0.1 250 380 400 MHz Unit µA µA
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