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2SC6026CT Datasheet - Toshiba

2SC6026CT - Silicon NPN Transistor

2SC6026CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC6026CT General Purpose Amplifier Applications High voltage and high current : VCEO = 50V, IC = 100mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)= 0.95 (typ.) High hFE : hFE = 120 to 400 Complementary to 2SA2154CT Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50

2SC6026CT_Toshiba.pdf

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Datasheet Details

Part number:

2SC6026CT

Manufacturer:

Toshiba ↗

File Size:

390.76 KB

Description:

Silicon npn transistor.

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