2SC6026CT - Silicon NPN Transistor
2SC6026CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC6026CT General Purpose Amplifier Applications High voltage and high current : VCEO = 50V, IC = 100mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)= 0.95 (typ.) High hFE : hFE = 120 to 400 Complementary to 2SA2154CT Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50
