* Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE range. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Para
2SC6022
Sanyo Semicon Device
73.27 KB
Npn epitaxial planar silicon transistor.
Ordering number : ENN8355
2SC6022
2SC6022
www.DataSheet4U.com Applications
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NPN Epitaxial Planar Silicon Transistor
DC / DC Converter App.
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