2SC6060 Datasheet - Toshiba

2SC6060 Transistor Silicon NPN Transistor

2SC6060 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6060 Power Amplifier Applications Driver Stage Amplifier Applications High-transition frequency: fT = 100 MHz (typ.) Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 230 230 .

2SC6060 Datasheet (193.33 KB)