2SC6061 Datasheet - Toshiba

2SC6061 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6061 2SC6061 High-Speed Switching Applications DC-DC Converter Applications High-DC current gain: hFE = 120 to 300 (IC = 0.1 A) Low-collector-emitter saturation: VCE (sat) = 0.14 V (max) High-speed switching: tf = 0.2 μs (typ.) Absolute Maximum Ratings (Ta = 25°C) 2.9±0.2 1.9±0.2 0.95 0.95 +0.2 2.8-0.3 +0.2 1.6-0.1 Unit: mm 0.4±0.1 1 2 3 0.16±0.05 0.15 0.7±0.05 Characteristic Symbol Rating Unit Collector-base voltage Collector-em.

2SC6061_Toshiba.pdf