Datasheet4U Logo Datasheet4U.com

2SC6061 - Silicon NPN Transistor

2SC6061 Description

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6061 2SC6061 High-Speed Switching Applications DC-DC Converter Applications High-DC current gain: h.

2SC6061 Applications

* DC-DC Converter Applications High-DC current gain: hFE = 120 to 300 (IC = 0.1 A) Low-collector-emitter saturation: VCE (sat) = 0.14 V (max) High-speed switching: tf = 0.2 μs (typ. ) Absolute Maximum Ratings (Ta = 25°C) 2.9±0.2 1.9±0.2 0.95 0.95 +0.2 2.8-0.3 +0.2 1.6-0.1 Unit: mm 0.4±0.1 1 2 3

📥 Download Datasheet

Preview of 2SC6061 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • 2SC606 - NPN SILICON TRANSISTOR (ETC)
  • 2SC6064 - NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SC6065 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC6000 - Silicon NPN Transistor (Toshiba Semiconductor)
  • 2SC6011 - NPN Transistor (INCHANGE)
  • 2SC6011A - PNP PowerTransistor (Sanken)
  • 2SC6012 - Silicon NPN triple diffusion Power Transistor (Panasonic Semiconductor)
  • 2SC6013 - NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)

📌 All Tags

Silicon NPN Transistor Toshiba
Toshiba 2SC6061-like datasheet