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2SC6061 - Silicon NPN Transistor

2SC6061 Description

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6061 2SC6061 High-Speed Switching Applications DC-DC Converter Applications High-DC current gain: h.

2SC6061 Applications

* DC-DC Converter Applications High-DC current gain: hFE = 120 to 300 (IC = 0.1 A) Low-collector-emitter saturation: VCE (sat) = 0.14 V (max) High-speed switching: tf = 0.2 μs (typ. ) Absolute Maximum Ratings (Ta = 25°C) 2.9±0.2 1.9±0.2 0.95 0.95 +0.2 2.8-0.3 +0.2 1.6-0.1 Unit: mm 0.4±0.1 1 2 3

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Toshiba 2SC6061-like datasheet