2SC6072 Datasheet - Toshiba

2SC6072 Multi-chip Device Silicon NPN Transistor

2SC6072 TOSHIBA Multi-chip Device Silicon NPN Epitaxial Transistor Type 2SC6072 Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm High transition frequency: fT = 200 MHz (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 18.

2SC6072 Features

* laws and regulations.

* Please con

2SC6072_Toshiba.pdf