2SC6077 Datasheet - Toshiba Semiconductor

2SC6077 Silicon NPN Transistor

2SC6077 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6077 ○ Power Amplifier Applications ○ Power Switching Applications Low collector saturation voltage: VCE (sat) = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 μs (typ) Unit: mm www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol VCBO VCEX VCEO VEBO DC Pulse IC ICP IB PC Tj Tstg Rating 160 160 80 9 3.0 5.0 1.0 1.8 150 55～150 Unit V V V V A A A W °C °C 1 : BASE .

2SC6077_ToshibaSemiconductor.pdf