* Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-
2SC6071
Sanyo Semicon Device
63.70 KB
Npn epitaxial planar silicon transistor.
www.DataSheet4U.com Ordering number : ENA0271 2SC6071 SANYO Semiconductors DATA SHEET 2SC6071 Applications NPN Epitaxial Planar Silico.
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