* Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications ( ) : 2SA2169 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-
2SC6017
Sanyo Semicon Device
226.17 KB
Npn epitaxial planar silicon transistors.
www.DataSheet4U.com
Ordering number : ENN8275
2SA2169 / 2SC6017
PNP / NPN Epitaxial Planar Silicon Transistors
2SA2169 / 2SC6017
Applications
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