Datasheet Specifications
- Part number
- 2SC6075
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 201.13 KB
- Datasheet
- 2SC6075_ToshibaSemiconductor.pdf
- Description
- Silicon NPN Transistor
Description
2SC6075 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6075 Power Amplifier Applications Power Switching Applications Low collector emitter saturat.
Applications
* Power Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 μs (typ) www. DataSheet4U. com Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage2SC6075 Distributors
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