2SC6075 Datasheet - Toshiba Semiconductor

2SC6075 Silicon NPN Transistor

2SC6075 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6075 Power Amplifier Applications Power Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 μs (typ) www.DataSheet4U.com Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC.

2SC6075_ToshibaSemiconductor.pdf