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2SC6105 Datasheet - Toshiba

2SC6105 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC6105 2SC6105 High Voltage Switching Applications High voltage: VCEO = 600 V (max) Low saturation voltage: VCE (sat) (1) = 1.0 V (max) @IC = 20 mA, IB = 0.5 mA Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC PULSE Base current Collector power dissipation Junction temp.

2SC6105 Datasheet (170.86 KB)

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Datasheet Details

Part number:

2SC6105

Manufacturer:

Toshiba ↗

File Size:

170.86 KB

Description:

Silicon npn transistor.

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2SC6105 Silicon NPN Transistor Toshiba

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