2SC6105 Datasheet (Toshiba) - Silicon NPN Transistor

2SC6105, Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC6105 2SC6105 High Voltage Switching Applications High voltage: VCEO = 600 V (max) Low saturation voltage: VCE (sat) (1) = 1.0 V (max) @IC = 20 mA, IB = 0.5 mA Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC PULSE Base current Collector power dissipation Junction temp