* Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications ( ) : 2SA2196 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base V
2SC6101
Sanyo Semicon Device
71.30 KB
Npn epitaxial planar silicon transistors.
www.DataSheet4U.com Ordering number : ENA0462 2SA2196 / 2SC6101 SANYO Semiconductors DATA SHEET 2SA2196 / 2SC6101 Applications PNP / N.
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