2SC6126 Datasheet - Toshiba

2SC6126 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6126 2SC6126 High-Speed Switching Applications DC-DC Converter Applications LCD Backlighting Applications Unit : mm ･ High DC current gain: hFE = 250 to 400 (IC= 0.3 A) ･ Low collector-emitter saturation: VCE(sat) = 0.18 V (max) ･ High-speed switching: tf = 40 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEX 120 V VCEO 50 V Emitter.

2SC6126_Toshiba.pdf