2SC6133 Datasheet - Toshiba

2SC6133 Silicon NPN Transistor

2SC6133 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6133 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 2.1±0.1 1.7±0.1 +0.1 0.3 -0.05 3 0.166±0.05 Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 45 ns (typ.) 2.0±0.1 High DC current gain: hFE = 400 to 1000 (IC = 0.15A) 0.65±0.05 0.7±0.05 1 2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitte.

2SC6133 Datasheet (159.85 KB)