2SC6135 Datasheet - Toshiba

2SC6135 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6135 2SC6135 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm 2.1±0.1 1.7±0.1 0.3-+00..015 2.0±0.1 0.65±0.05 High DC current gain: hFE = 400 to 1000 (IC = 0.1A) Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max) High-speed switching: tf = 85 ns (typ.) 1 2 3 0.166±0.05 Absolute Maximum Ratings (Ta = 25°C) 0.7±0.05 Characteristics Symbol Rating U.

2SC6135 Datasheet (282.95 KB)