2SC6125 Datasheet - Toshiba

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2SC6125 Silicon NPN Transistor

2SC6125 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6125 High-Speed Switching Applications Power Amplifier Applications * High DC curren.

2SC6125_Toshiba.pdf

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Datasheet Details

Part number:

2SC6125

Manufacturer:

Toshiba ↗

File Size:

171.04 KB

Description:

Silicon NPN Transistor

Features

* apons or missile technology products (m

Applications

* Power Amplifier Applications
* High DC current gain: hFE = 180 to 390 (IC = 0.5 A)
* Low collector-emitter saturation: VCE (sat) = 0.2 V (max)
* High-speed switching: tf = 15 ns (typ. ) Unit : mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Colle

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2SC6125 Silicon NPN Transistor Toshiba

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