2SC6125 Datasheet - Toshiba

2SC6125 Silicon NPN Transistor

2SC6125 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6125 High-Speed Switching Applications Power Amplifier Applications High DC current gain: hFE = 180 to 390 (IC = 0.5 A) Low collector-emitter saturation: VCE (sat) = 0.2 V (max) High-speed switching: tf = 15 ns (typ.) Unit : mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (Note 1) Base current Collector power dissi.

2SC6125 Features

* apons or missile technology products (m

2SC6125_Toshiba.pdf