2SC6127 Datasheet - Toshiba

2SC6127 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6127 High Voltage Switching Applications High Voltage Amplifier Applications 2SC6127 Unit: mm High voltage: VCEO = 800 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage VCBO 800 V VCEO 800 V VEBO 5 V Collector current IC 50 mA Base current IB 25 mA Collector power dissipation Ta = 25°C Tc = 25°C PC 1.0 W 10 Ju.

2SC6127-Toshiba.pdf