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TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC6105
2SC6105
High Voltage Switching Applications
• High voltage:
VCEO = 600 V (max)
• Low saturation voltage: VCE (sat) (1) = 1.0 V (max)
@IC = 20 mA, IB = 0.5 mA
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC PULSE
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB PC Tj Tstg
600
V
600
V
7
V
50 mA
100
25
mA
200
mW
150
°C
−55 to 150
°C
JEDEC JEITA
TO-236MOD SC-59
Note:
Using continuously under heavy loads (e.g.
2SC6105 Datasheet
