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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6127
High Voltage Switching Applications High Voltage Amplifier Applications
2SC6127
Unit: mm
• High voltage: VCEO = 800 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage
VCBO
800
V
VCEO
800
V
VEBO
5
V
Collector current
IC
50
mA
Base current
IB
25
mA
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
1.0 W
10
Junction temperature Storage temperature range
Tj
150
°C
Tstg
−55 to 150
°C
JEDEC
―
Note1: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in temperature, etc.
2SC6127 Datasheet
