The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SC6125
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6125
High-Speed Switching Applications Power Amplifier Applications
• High DC current gain: hFE = 180 to 390 (IC = 0.5 A) • Low collector-emitter saturation: VCE (sat) = 0.2 V (max) • High-speed switching: tf = 15 ns (typ.) Unit : mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (Note 1) Base current Collector power dissipation (Note 2) Junction temperature Storage temperature range DC t = 10 s DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC PC Tj Tstg Rating 40 20 6 4 7 0.4 1 2.5 150 −55 to 150 Unit V V V A
JEDEC
A W °C °C
― SC-62 2-5K1A
JEITA TOSHIBA
Weight: 0.05 g (typ.
2SC6125 Datasheet
