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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6126
2SC6126
High-Speed Switching Applications DC-DC Converter Applications LCD Backlighting Applications
Unit : mm
･ High DC current gain: hFE = 250 to 400 (IC= 0.3 A) ･ Low collector-emitter saturation: VCE(sat) = 0.18 V (max) ･ High-speed switching: tf = 40 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEX
120
V
VCEO
50
V
Emitter-base voltage
VEBO
6
V
DC
IC
Collector current (Note1)
Pulse
ICP
3 A
5
Base current
IB
1.5
A
Collector power dissipation
DC
PC
1.0
t = 10 s
(Note2)
2.
2SC6126 Datasheet
