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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6124
Power Amplifier Applications Power Switching Applications
2SC6124
Unit: mm
Low collector emitter saturation voltage : VCE (sat) = 0.5 V (Max)
High-speed switching: tstg = 400 ns (Typ.) Complementary to 2SA2206
(IC = 1 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
DC Pulse
t = 10 s DC
VCBO VCEX VCEO VEBO
IC ICP IB PC (Note 1) Tj Tstg
160
V
160
V
80
V
7
V
2
A
4
A
0.5
A
2.5 W
1.0
150
°C
−55 to 150 °C
1 : BASE 2 : COLLECTOR (HEAT SINK) 3 : EMITTER
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (Typ.