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2SC6124 - Silicon NPN Transistor

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Part number 2SC6124
Manufacturer Toshiba
File Size 294.37 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC6124 Datasheet

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TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6124 Power Amplifier Applications Power Switching Applications 2SC6124 Unit: mm Low collector emitter saturation voltage : VCE (sat) = 0.5 V (Max) High-speed switching: tstg = 400 ns (Typ.) Complementary to 2SA2206 (IC = 1 A) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse t = 10 s DC VCBO VCEX VCEO VEBO IC ICP IB PC (Note 1) Tj Tstg 160 V 160 V 80 V 7 V 2 A 4 A 0.5 A 2.5 W 1.0 150 °C −55 to 150 °C 1 : BASE 2 : COLLECTOR (HEAT SINK) 3 : EMITTER JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (Typ.