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2SC6133
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6133
High-Speed Switching Applications DC-DC Converter Applications
Unit: mm
2.1±0.1 1.7±0.1 +0.1 0.3 -0.05 3 0.166±0.05
• •
Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 45 ns (typ.)
2.0±0.1
•
High DC current gain: hFE = 400 to 1000 (IC = 0.15A)
0.65±0.05 0.7±0.05
1 2
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PＣ (Note1) PＣ (Note2) Junction temperature Storage temperature range Tj Tstg Rating 40 30 20 7 1.5 2.
2SC6133 Datasheet
