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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6135
2SC6135
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
Unit: mm
2.1±0.1 1.7±0.1
0.3-+00..015
2.0±0.1 0.65±0.05
• High DC current gain: hFE = 400 to 1000 (IC = 0.1A) • Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max) • High-speed switching: tf = 85 ns (typ.)
1
2
3
0.166±0.05
Absolute Maximum Ratings (Ta = 25°C)
0.7±0.05
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Junction temperature Storage temperature range
VCBO
100
V
VCEX
80
V
VCEO
50
V
VEBO
7
V
IC
1.0
A
ICP
2.0
IB
0.
2SC6135 Datasheet
