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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6142
2SC6142
○ High Voltage Switching Applications ○ Switching Regulator Applications ○ DC-DC Converter Applications
６．５±０．２ ５．２±０．２
Unit: mm
０．６ MAX．
１．５±０．２
１．６ ５．５±０．２
• Excellent switching times: tf = 0.15 μs (typ.) • High collector breakdown voltage: VCES = 800 V, VCEO = 375 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO VCES VCEO VEBO
IC ICP IB PC Tj Tstg
Rating
Unit
800
V
800
V
375
V
8
V
1.5 A
3
0.75
A
1.
2SC6142 Datasheet
