2SC6100 - Silicon NPN Transistor
TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6100 2SC6100 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm 2.1±0.1 1.7±0.1 0.3-+00..015 2.0±0.1 0.65±0.05 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) High-speed switching: tf = 120 ns (typ.) 1 2 3 0.166±0.05 Absolute Maximum Ratings (Ta = 25°C) 0.7±0.05 Characteristics Symbol Rating
