FDMA410NZT - N-Channel MOSFET

ON Semiconductor

FDMA410NZT Datasheet Preview — Preview of FDMA410NZT PDF

Datasheet Details

Part number	FDMA410NZT
Manufacturer	ON Semiconductor ↗
File Size	419.46 KB
Description	N-Channel MOSFET
Datasheet	FDMA410NZT-ONSemiconductor.pdf

FDMA410NZT Product details

Description

This Single N Channel MOSFET has been designed using onsemi’s advanced Power Trench process to optimize the RDS(on) @ VGS = 1.5 V on special MicroFETt leadframe.This design is similar to the FDMA410NZ, however it

Features

our new advanced 0.55 mm max 2 x 2 MLP package technology. Features.
0.55 mm max package height MicroFET 2 x 2 mm Package.
Max RDS(on) = 23 mW at VGS = 4.5 V, ID = 9.5 A.
Max RDS(on) = 29 mW at VGS = 2.5 V, ID = 8.0 A.
Max RDS(on) = 36 mW at VGS = 1.8 V, ID = 4.0 A.
Max RDS(on) = 60 mW at VGS = 1.5 V, ID = 2.0 A.
HBM ESD protection level > 1.5 kV (Note 3).
These Devices are Pb.
Free, Halogen Free/BFR Free and are RoHS Complian.

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Published: Apr 30, 2021 |