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MMBV3700LT1G High Voltage Silicon Pin Diodes

MMBV3700LT1G Description

MMBV3700LT1G High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use i.

MMBV3700LT1G Features

* Long Reverse Recovery Time trr = 300 ns (Typ)
* Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability
* Low Series Resistance @ 100 MHz
* RS = 0.7 W (Typ) @ IF = 10 mA
* Reverse Breakdown Voltage = 200 V (Min)
* These Device

MMBV3700LT1G Applications

* but are also suitable for use in general
* purpose switching circuits. They are supplied in a cost
* effective plastic package for economical, high

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