NVVR26A120M1WSB - SiC Module

ON Semiconductor

NVVR26A120M1WSB Datasheet Preview — Preview of NVVR26A120M1WSB PDF

Datasheet Details

Part number	NVVR26A120M1WSB
Manufacturer	ON Semiconductor ↗
File Size	510.01 KB
Description	SiC Module
Datasheet	NVVR26A120M1WSB-ONSemiconductor.pdf

NVVR26A120M1WSB Product details

Description

The NVVR26A120M1WSB is part of the VE Tract B2 SiC family of highly integrated power modules for Hybrid (HEV) and Electric Vehicle (EV) traction inverter application.The module integrates 1200 V SiC MOSFET in a half bridge configuration.

Features

Ultra Low RDS(on).
Aluminum Nitride Isolator.
Ultra.
low Stray Inductance ~ 7.1 nH.
Tvj. Max = 175°C for Continuous Operation.
Automotive Grade SiC MOSFET Chip Technologies.
Sintered Die Technology for High Reliability Performance.
Automotive Module AQG324 Compliant.
PPAP Capable.

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