40H20AD Datasheet, Mosfet, OuCan

40H20AD Features

• Mosfet
• VDS = 40V,ID =200A RDS(ON) < 2.6mΩ @ VGS=10V (Typ:2.0mΩ)
• Special process technology for high ESD capability
• High density cell design for ultra low Rdson

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Part number:

40H20AD

Manufacturer:

OuCan

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The FQB200N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

40H20AD Application

• Applications General Features
• VDS = 40V,ID =200A RDS(ON) < 2.6mΩ @ VGS=10V (Typ:2.0mΩ)
• Special process technology for high E

TAGS

40H20AD

OuCan

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