40H20AD

N-Channel Enhancement Mode Power MOSFET

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Part number:

40H20AD

Manufacturer:

OuCan

File Size:

283.77 KB

Description:

N-channel enhancement mode power mosfet.
FQB200N04 N-Channel Enhancement Mode Power MOSFET Description The FQB200N04 uses advanced trench te.
The FQB200N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate .

✔ 40H20AD Features

VDS = 40V,ID =200A RDS(ON) < 2.6mΩ @ VGS=10V (Typ:2.0mΩ)
Special process technology for high ESD capability
High density cell design for ultra low Rdson
Fully c

✔ 40H20AD Application

General Features
VDS = 40V,ID =200A RDS(ON) < 2.6mΩ @ VGS=10V (Typ:2.0mΩ)
Special process technology

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40H20AD N-Channel Enhancement Mode Power MOSFET OuCan

Datasheet Details

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Description:

✔ 40H20AD Features

✔ 40H20AD Application

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