Part number:
XP2212
Manufacturer:
PHOTONIS
File Size:
83.36 KB
Description:
Photomultiplier tubes.
XP2212
PHOTONIS
83.36 KB
Photomultiplier tubes.
📁 Related Datasheet
XP2210 - Silicon NPN epitaxial planer transistor
(Panasonic Semiconductor)
Composite Transistors
XP2210
Silicon NPN epitaxial planer transistor
Unit: mm
2.1±0.1 0.425 1.25±0.1 0.425
0.2±0.05 0.12 – 0.02
+0.05
For switching/.
XP2211 - Silicon NPN epitaxial planer transistor
(Panasonic Semiconductor)
Composite Transistors
XP2211
Silicon NPN epitaxial planer transistor
Unit: mm
2.1±0.1 0.425 1.25±0.1 0.425
0.2±0.05 0.12 – 0.02
+0.05
For switching/.
XP2215 - Silicon NPN epitaxial planer transistor
(Panasonic Semiconductor)
Composite Transistors
XP2215
Silicon NPN epitaxial planer transistor
Unit: mm
2.1±0.1 0.425 1.25±0.1 0.425
0.2±0.05 0.12 – 0.02
+0.05
For switching/.
XP221P05013R-G - P-channel MOSFET
(Torex)
XP221P05013R-G
P-channel MOSFET -20V, -0.5A
■FEATURES
On-State Resistance Driving voltage Environmentally Friendly
: RDS(on)＝1.3Ω@VGS =-4.5V : -1.8.
XP221P0501TR-G - P-channel MOSFET
(Torex Semiconductor)
XP221P0501TR-G
P-channel MOSFET -20V, -0.5A
■FEATURES
On-State Resistance Driving voltage Environmentally Friendly
: RDS(on)＝1.3Ω@VGS =-4.5V : -1.8.
XP2206 - A tube
(Photonis)
..
photomultiplier tubes product specification
XP2206
A tube for hot environment, 10-stage, 51mm (2 ) tube
Applications :
For scin.
XP222N03013R-G - N-channel MOSFET
(Torex Semiconductor)
XP222N03013R-G
N-channel MOSFET 20V, 0.3A
ETR11076-001
■FEATURES
On-State Resistance Driving voltage Environmentally Friendly
: RDS(on)=1.3Ω@VGS =4.
XP222N03015R-G - N-channel MOSFET
(Torex Semiconductor)
XP222N03015R-G
N-channel MOSFET 20V, 0.3A
ETR11079-001
■FEATURES
On-State Resistance Driving voltage Environmentally Friendly
: RDS(on)=1.3Ω@VGS =4.
