• Part: PTP03N06NB
  • Description: 60V N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: PIP
  • Size: 1.07 MB
Download PTP03N06NB Datasheet PDF
PIP
PTP03N06NB
Features - Proprietary New Trench Technology - RDS(ON),typ.=3.4 mΩ@VGS=10V - Low Gate Charge Minimize Switching Loss - Fast Recovery Body Diode BVDSS 60V RDS(ON),typ. 3.4mΩ ID[2] 150A Applications - High efficiency DC/DC Converters - Synchronous Rectification - UPS Inverter Ordering Information Part Number Package TO-220 Brand TO-220 Package No to Scale Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGSS IDM EAS TL TPAK Parameter Drain-to-Source Voltage[1] Gate-to-Source Voltage Continuous Drain Current[2] Continuous Drain Current @ Tc=100℃ Pulsed Drain Current at VGS=10V[2,4] Single Pulse Avalanche Energy Power Dissipation Derating Factor above 25℃ Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds 60 ±20 150 105 600 635 220 1.47 300 260 Unit V A m J W W/℃ ℃ TJ& TSTG Operating and Storage Temperature Range -55 to 175 Caution: Stresses greater than...