PTP03N04N - 40V N-Channel MOSFET

Features

Proprietary New Trench Technology RDS(ON),typ. =2.1 m Ω@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode BVDSS 40V RDS(ON),typ. 2.1mΩ ID[2] 240A.

PIP

PTP03N04N 40V N-Channel MOSFET by PIP - Datasheet Preview — Datasheet preview – PTP03N04N

Datasheet Details

Part number	PTP03N04N
Manufacturer	PIP
File Size	1.21 MB
Description	40V N-Channel MOSFET
Datasheet	PTP03N04N Datasheet
Additional preview pages of the PTP03N04N datasheet.

📁 Similar Datasheet

PTP13005 - NPN Silicon Power Transistor (Wing On)
PTP13007 - NPN Silicon Power Transistor (Wing On)
PTP13009 - NPN Silicon Power Transistor (Wing On)
PTP5027 - NPN Silicon Power Transistor (Wing On)
PTP5027 - NPN Silicon Power Transistor (Power Device)
PTP73010T20 - Phototransistor (CT Micro)
PTP81608T08 - SMD Type Phototransistor (CT Micro)
PTP81708T06 - Phototransistor (CT Micro)
PTP83010BT20 - Phototransistor (CT Micro)
PTP83015BT12 - Phototransistor (CT Micro)

Other Datasheets by PIP

PTP03N06NB - 60V N-Channel MOSFET
PTP02N03N - 30V N-Channel MOSFET
PTP04N04N - 40V N-Channel MOSFET
PTP04N08N - 80V N-Channel MOSFET
PTP07N80 - 800V N-Channel MOSFET
PTP08N06N1 - 60V N-Channel MOSFET
PTP08N08NA - 85V N-Channel MOSFET
PTP10N80 - 800V N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

PTP03N04N 40V N-Channel MOSFET General Features Proprietary New Trench Technology RDS(ON),typ.=2.1 m Ω@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode BVDSS 40V RDS(ON),typ. 2.

Published: Feb 13, 2025 |