PIP PTP03N04N
40V N-Channel MOSFET
| Part No. | PTP03N04N |
|---|---|
| Datasheet | PTP03N04N Download |
| Manufacturer |  PIP |
| Description | 40V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL FEATURES
Proprietary New Trench Technology RDS(ON),typ.=2.1 m Ω@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode BVDSS 40V RDS(ON),typ. 2.1mΩ ID[2] 240AAPPLICATIONS
High efficiency DC/DC Converters Synchronous Rectification UPS Inverter Ordering Information Part Number Package PTP03N04N TO-220 BrandABSOLUTE MAXIMUM RATINGS
℃ TC=25 unless otherwise specified Symbol VDSS VGSS ID IDM EAS dv/dt PD TL TPAK Parameter Drain-to-Source Voltage[1] Gate-to-Source Voltage Continuous Drain Current[2] Continuous Drain Current[3] ℃ Continuous Drain Current @ Tc=100 [2] Pulsed Drain Current at VGS=10V[2,4] Single Pulse Avalanche Energy Peak Diode Recovery dv/dt[3] Power Dissipation ℃ Derating Factor above 25 Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds PTP03N04N 40 ±20 240 80 180 960 1500 5.0 300 2.0 300 260 Unit V A mJ V/ns W W/℃ ℃ TJ& TSTG Operating and Storage Temperature Range -55 to 175 Caution: Stresses greater than those listed in the “ABSOLUTE MAXIMUM RATINGS
” may cause permanent damage to the device.
