PTP03N06NB Overview
PTP03N06NB 60V N-Channel MOSFET General.
PTP03N06NB Key Features
- Proprietary New Trench Technology
- RDS(ON),typ.=3.4 mΩ@VGS=10V
- Low Gate Charge Minimize Switching Loss
- Fast Recovery Body Diode
Datasheet Details
| Part number | PTP03N06NB |
|---|---|
| Datasheet | PTP03N06NB-PIP.pdf |
| File Size | 1.07 MB |
| Manufacturer | PIP |
| Description | 60V N-Channel MOSFET |
|
|