PIP PTP03N06NB
60V N-Channel MOSFET
| Part No. | PTP03N06NB |
|---|---|
| Datasheet | PTP03N06NB Download |
| Manufacturer |  PIP |
| Description | 60V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL FEATURES
● Proprietary New Trench Technology● RDS(ON),typ.=3.4 mΩ@VGS=10V
● Low Gate Charge Minimize Switching Loss
● Fast Recovery Body Diode BVDSS 60V RDS(ON),typ. 3.4mΩ ID[2] 150A
APPLICATIONS
● High efficiency DC/DC Converters● Synchronous Rectification
● UPS Inverter Ordering Information Part Number Package PTP03N06NB TO-220 Brand G D S TO-220 Package No to Scale
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol VDSS VGSS ID IDM EAS PD TL TPAK Parameter Drain-to-Source Voltage[1] Gate-to-Source Voltage Continuous Drain Current[2] Continuous Drain Current @ Tc=100℃ Pulsed Drain Current at VGS=10V[2,4] Single Pulse Avalanche Energy Power Dissipation Derating Factor above 25℃ Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds PTP03N06NB 60 ±20 150 105 600 635 220 1.47 300 260 Unit V A mJ W W/℃ ℃ TJ& TSTG Operating and Storage Temperature Range -55 to 175 Caution: Stresses greater than those listed in the “ABSOLUTE MAXIMUM RATINGS
” may cause permanent damage to the device.
