PTP03N06NB Overview
Key Features
- Proprietary New Trench Technology
- RDS(ON),typ.=3.4 mΩ@VGS=10V
- Low Gate Charge Minimize Switching Loss
- Fast Recovery Body Diode BVDSS 60V RDS(ON),typ. 3.4mΩ ID[2] 150A
| Part | PTP03N06NB |
|---|---|
| Description | 60V N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | PIP |
| Size | 1.07 MB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |