PTP03N06NB - 60V N-Channel MOSFET

Features

Proprietary New Trench Technology.
RDS(ON),typ. =3.4 mΩ@VGS=10V.
Low Gate Charge Minimize Switching Loss.
Fast Recovery Body Diode BVDSS 60V RDS(ON),typ. 3.4mΩ ID[2] 150A.

PIP

PTP03N06NB 60V N-Channel MOSFET by PIP - Datasheet Preview — Datasheet preview – PTP03N06NB

Datasheet Details

Part number	PTP03N06NB
Manufacturer	PIP
File Size	1.07 MB
Description	60V N-Channel MOSFET
Datasheet	PTP03N06NB Datasheet
Additional preview pages of the PTP03N06NB datasheet.

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Full PDF Text Transcription

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PTP03N06NB 60V N-Channel MOSFET General Features  Proprietary New Trench Technology  RDS(ON),typ.=3.4 mΩ@VGS=10V  Low Gate Charge Minimize Switching Loss  Fast Recovery Body Diode BVDSS 60V RDS(ON),typ. 3.

Published: Jul 19, 2025 |