• Part: PTP04N04N
  • Description: 40V N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: PIP
  • Size: 865.66 KB
Download PTP04N04N Datasheet PDF
PIP
PTP04N04N
Features Proprietary New Trench Technology RDS(ON),typ.=3.0m Ω@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode BVDSS 40V RDS(ON),typ. 3.0mΩ ID 206A Applications DC-DC Converters DC-AC Inverters Power Supply Ordering Information Part Number Package TO-220 Brand TO-220 Package No to Scale Absolute Maximum Ratings ℃ TC=25 unless otherwise specified Symbol VDSS VGSS IDM EAS dv/dt TL TPAK Parameter Drain-to-Source Voltage[1] Gate-to-Source Voltage Continuous Drain Current[2] Continuous Drain Current[3] Pulsed Drain Current at VGS=10V[2,4] Single Pulse Avalanche Energy Peak Diode Recovery dv/dt[3] Power Dissipation ℃ Derating Factor above 25 Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds 40 ±20 206 80 480 500 5.0 300 300 260 Unit V A m J V/ns ℃ W/ ℃ TJ& TSTG Operating and Storage Temperature Range -55 to 175 Caution: Stresses greater...