PTP04N08N Key Features
- Proprietary New Trench Technology
- RDS(ON),typ.=4.2 mΩ@VGS=10V
- Low Gate Charge Minimize Switching Loss
- Fast Recovery Body Diode
| Part Number | Description |
|---|---|
| PTP04N04N | 40V N-Channel MOSFET |
| PTP02N03N | 30V N-Channel MOSFET |
| PTP03N04N | 40V N-Channel MOSFET |
| PTP03N06NB | 60V N-Channel MOSFET |
| PTP07N80 | 800V N-Channel MOSFET |