PIP PTP04N08N
80V N-Channel MOSFET
| Part No. | PTP04N08N |
|---|---|
| Datasheet | PTP04N08N Download |
| Manufacturer |  PIP |
| Description | 80V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL FEATURES
● Proprietary New Trench Technology● RDS(ON),typ.=4.2 mΩ@VGS=10V
● Low Gate Charge Minimize Switching Loss
● Fast Recovery Body Diode PTP04N08N BVDSS 80V RDS(ON),typ. 4.2mΩ ID[2] 130A
APPLICATIONS
● High efficiency DC/DC Converters● Synchronous Rectification
● UPS Inverter GDS Ordering Information Part Number Package PTP04N08N TO-220 Brand TO-220 Package Not to Scale
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol VDSS VGSS ID ID @ Tc =100℃ IDM EAS dv/dt PD TL TPAK Parameter Drain-to-Source Voltage[1] Gate-to-Source Voltage Continuous Drain Current[2] Continuous Drain Current[3] Continuous Drain Current @ Tc=100℃[2] Pulsed Drain Current at VGS=10V[2,4] Single Pulse Avalanche Energy Peak Diode Recovery dv/dt[3] Power Dissipation Derating Factor above 25℃ Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds PTP04N08N 80 ±20 130 80 100 390 900 5.0 300 2.0 300 260 Unit V A mJ V/ns W W/℃ ℃ TJ& T...
