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PTP04N04N - 40V N-Channel MOSFET

Features

  • Proprietary New Trench Technology RDS(ON),typ. =3.0m Ω@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode PTP04N04N BVDSS 40V RDS(ON),typ. 3.0mΩ ID 206A.

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Datasheet Details

Part number PTP04N04N
Manufacturer PIP
File Size 865.66 KB
Description 40V N-Channel MOSFET
Datasheet download datasheet PTP04N04N Datasheet
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40V N-Channel Trench MOSFET General Features Proprietary New Trench Technology RDS(ON),typ.=3.0m Ω@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode PTP04N04N BVDSS 40V RDS(ON),typ. 3.0mΩ ID 206A Applications DC-DC Converters DC-AC Inverters Power Supply Ordering Information Part Number Package PTP04N04N TO-220 Brand G D S TO-220 Package No to Scale Absolute Maximum Ratings ℃ TC=25 unless otherwise specified Symbol VDSS VGSS ID IDM EAS dv/dt PD TL TPAK Parameter Drain-to-Source Voltage[1] Gate-to-Source Voltage Continuous Drain Current[2] Continuous Drain Current[3] Pulsed Drain Current at VGS=10V[2,4] Single Pulse Avalanche Energy Peak Diode Recovery dv/dt[3] Power Dissipation ℃ Derating Factor above 25 Maximum Temperature for Soldering Leads at 0.
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