PIP PTP04N04N
40V N-Channel MOSFET
| Part No. | PTP04N04N |
|---|---|
| Datasheet | PTP04N04N Download |
| Manufacturer |  PIP |
| Description | 40V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL FEATURES
Proprietary New Trench Technology RDS(ON),typ.=3.0m Ω@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode PTP04N04N BVDSS 40V RDS(ON),typ. 3.0mΩ ID 206AAPPLICATIONS
DC-DC Converters DC-AC Inverters Power Supply Ordering Information Part Number Package PTP04N04N TO-220 Brand G D S TO-220 Package No to ScaleABSOLUTE MAXIMUM RATINGS
℃ TC=25 unless otherwise specified Symbol VDSS VGSS ID IDM EAS dv/dt PD TL TPAK Parameter Drain-to-Source Voltage[1] Gate-to-Source Voltage Continuous Drain Current[2] Continuous Drain Current[3] Pulsed Drain Current at VGS=10V[2,4] Single Pulse Avalanche Energy Peak Diode Recovery dv/dt[3] Power Dissipation ℃ Derating Factor above 25 Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds PTP04N04N 40 ±20 206 80 480 500 5.0 300 2 300 260 Unit V A mJ V/ns W ℃ W/ ℃ TJ& TSTG Operating and Storage Temperature Range -55 to 175 Caution: Stresses greater than those listed in the “ABSOLUTE MAXIMUM RATINGS
” may cause permanent damage to the device.
