PTP04N08N - 80V N-Channel MOSFET

Datasheet Summary

Features

Proprietary New Trench Technology.
RDS(ON),typ. =4.2 mΩ@VGS=10V.
Low Gate Charge Minimize Switching Loss.
Fast Recovery Body Diode PTP04N08N BVDSS 80V RDS(ON),typ. 4.2mΩ ID[2] 130A.

PIP

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PTP04N08N 80V N-Channel MOSFET by PIP - Datasheet Preview — Datasheet preview – PTP04N08N

Datasheet Details

Part number	PTP04N08N
Manufacturer	PIP
File Size	1.07 MB
Description	80V N-Channel MOSFET
Datasheet	PTP04N08N Datasheet
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Full PDF Text Transcription

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80V N-Channel MOSFET General Features  Proprietary New Trench Technology  RDS(ON),typ.=4.2 mΩ@VGS=10V  Low Gate Charge Minimize Switching Loss  Fast Recovery Body Diode PTP04N08N BVDSS 80V RDS(ON),typ. 4.

Published: Feb 13, 2025 |