MMBT5551 Datasheet - Pan Jit International

MMBT5551 NPN HIGH VOLTAGE TRANSISTOR

MMBT5551 Features

* NPN Silicon, planar design

* Collector-emitter voltage VCE = 160V

* Collector current IC = 300mA

* Lead free in comply with EU RoHS 2002/95/EC directives.

* Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA

* Case: SOT-23,

Datasheet Details

MMBT5551

Pan Jit International

265.50 KB

Npn high voltage transistor.

MMBT5551 Distributor

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