MMBT5551

NPN HIGH VOLTAGE TRANSISTOR

Pan Jit International

* NPN Silicon, planar design

* Collector-emitter voltage VCE = 160V

* Collector current IC = 300mA

* Lead free in comply with EU RoHS 2002/95/EC directives.

* Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA

* Case: SOT-23,

MMBT5551

Pan Jit International

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Npn high voltage transistor.

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MMBT5551 NPN HIGH VOLTAGE TRANSISTOR Pan Jit International

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