PJ6680 - 25V N-Channel Enhancement Mode MOSFET

Pan Jit International

Datasheet Details

Part number	PJ6680
Manufacturer	Pan Jit International
File Size	173.86 KB
Description	25V N-Channel Enhancement Mode MOSFET
Datasheet	PJ6680_PanJitInternational.pdf

RDS(ON), VGS@10V,IDS@12A=10mΩ.
RDS(ON), VGS@4.5V,IDS@10A=18mΩ.
Advanced Trench Process Technology.
High Density Cell Design For Ultra Low On-Resistance.
Specially Designed for DC/DC Converters.
Fully Characterized Avalanche Voltage and Current.
Pb free product : 99% Sn above can meet RoHS environment substance directive request SOIC-08.

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Published: Apr 5, 2010 |