PJ614DA Datasheet - UNIKC

PJ614DA Dual N-Channel MOSFET

PJ614DA Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 12.5mΩ @VGS = 4.5V 9A J-Lead ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±10 Continuous Drain Current2 Pulsed Drain Current1 TA= 25 °C TA= 70 °C ID 9 7 IDM 28 Avalanche Current IAS 22 Avalanche Energy L=0.1mH EAS 24 Power Dissipation TA= 25 °C TA= 70°C PD 1.7 1 Opera.

PJ614DA-UNIKC.pdf